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OverviewThis text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of heterojunction transistors, and their relevance in developing the technologies involving strained layers, device design and simulation of coventional silicon bipolar transistors and SiGe HBTs at room and low temperatures, device design and simulation for MOSEFETs, including SiGe and strained-Si channel MOSEFETs. It concludes with simulations and examples for different applications. Full Product DetailsAuthor: C K Maiti (Indian Institute of Technology, Kharagpur, India) , G a ArmstrongPublisher: CRC Press Imprint: CRC Press ISBN: 9786610650590ISBN 10: 6610650594 Pages: 417 Publication Date: 20 July 2001 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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