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OverviewFull Product DetailsAuthor: Vassil Palankovski , Rüdiger QuayPublisher: Springer Verlag GmbH Imprint: Springer Verlag GmbH Edition: 2004 ed. Dimensions: Width: 15.50cm , Height: 1.90cm , Length: 23.50cm Weight: 1.390kg ISBN: 9783211405376ISBN 10: 3211405372 Pages: 289 Publication Date: 18 December 2003 Audience: General/trade , College/higher education , Professional and scholarly , General , Undergraduate Format: Hardback Publisher's Status: Active Availability: Out of print, replaced by POD ![]() We will order this item for you from a manufatured on demand supplier. Table of Contents1. Introduction.- 2. State-of-the-Art of Materials, Device Modeling, and RF Devices.- 2.1 State-of-the-Art of Heterostructure RF Device Modeling.- 2.2 State-of-the-Art of Heterostructure Devices and Optimization Potentials.- 3. Physical Models.- 3.1 Sets of Partial Differential Equations.- 3.2 Lattice and Thermal Properties.- 3.3 Band Structure.- 3.4 Carrier Mobility.- 3.5 Energy and Momentum Relaxation.- 3.6 Generation and Recombination.- 4. RF Parameter Extraction for HEMTs and HBTs.- 4.1 RF Parameter Extraction Methods.- 4.2 Contributions to the Small-Signal EquivalentCircuit Element.- 5. Heterojunction Bipolar Transistor.- 5.1 General Considerations.- 5.2 SiGe HBTs.- 5.3 High-Power GaAs HBTs.- 5.4 High-Speed InP HBTs.- 6. High Electron Mobility Transistor.- 6.1 General Considerations.- 6.2 High-Speed and High-Power AlGaAs/InGaAs PHEMTs.- 6.3 High-Speed InAlAs/InGaAs HEMTs on InP and GaAs.- 6.4 High-Power High-Speed AlGaN/GaN HEMTs.- 7. Novel Devices.- 7.1 InP DHBTs with GaAsSb Bases.- 7.2 AlGaN/GaN HBTs.- A. Appendix: Benchmark Structures.- Reference.- List of Figures.- List of Tables.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |