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Author:   Vassil Palankovski ,  Rüdiger Quay
Publisher:   Springer Verlag GmbH
Imprint:   Springer Verlag GmbH
Edition:   2004 ed.
Dimensions:   Width: 15.50cm , Height: 1.90cm , Length: 23.50cm
Weight:   1.390kg
ISBN:  

9783211405376

ISBN 10:   3211405372
Pages:   289
Publication Date:   18 December 2003
Audience:   General/trade ,  College/higher education ,  Professional and scholarly ,  General ,  Undergraduate
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of print, replaced by POD  
We will order this item for you from a manufatured on demand supplier.

Table of Contents

1. Introduction.- 2. State-of-the-Art of Materials, Device Modeling, and RF Devices.- 2.1 State-of-the-Art of Heterostructure RF Device Modeling.- 2.2 State-of-the-Art of Heterostructure Devices and Optimization Potentials.- 3. Physical Models.- 3.1 Sets of Partial Differential Equations.- 3.2 Lattice and Thermal Properties.- 3.3 Band Structure.- 3.4 Carrier Mobility.- 3.5 Energy and Momentum Relaxation.- 3.6 Generation and Recombination.- 4. RF Parameter Extraction for HEMTs and HBTs.- 4.1 RF Parameter Extraction Methods.- 4.2 Contributions to the Small-Signal EquivalentCircuit Element.- 5. Heterojunction Bipolar Transistor.- 5.1 General Considerations.- 5.2 SiGe HBTs.- 5.3 High-Power GaAs HBTs.- 5.4 High-Speed InP HBTs.- 6. High Electron Mobility Transistor.- 6.1 General Considerations.- 6.2 High-Speed and High-Power AlGaAs/InGaAs PHEMTs.- 6.3 High-Speed InAlAs/InGaAs HEMTs on InP and GaAs.- 6.4 High-Power High-Speed AlGaN/GaN HEMTs.- 7. Novel Devices.- 7.1 InP DHBTs with GaAsSb Bases.- 7.2 AlGaN/GaN HBTs.- A. Appendix: Benchmark Structures.- Reference.- List of Figures.- List of Tables.

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