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Author:   Juin Jei Liou ,  Adelmo Ortiz-Conde ,  Francisco Garcia-Sanchez
Publisher:   Chapman and Hall
Imprint:   Chapman and Hall
Edition:   1998 ed.
Dimensions:   Width: 15.50cm , Height: 2.20cm , Length: 23.50cm
Weight:   1.540kg
ISBN:  

9780412146015

ISBN 10:   0412146010
Pages:   349
Publication Date:   30 September 1998
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1. MOSFET physics and modeling.- 1.1 MOSFET evolution and its integrated circuits.- 1.2 MOS fundamentals.- 1.3 Concept and operation of MOSFETs.- 1.4 Modeling of conventional MOSFETs.- 1.5 Short-channel effects.- 1.6 Narrow-channel effects.- 1.7 Hot-carrier effects.- 1.8 Quantum mechanical effects in deep-submicron MOS devices.- 1.9 Modeling the lightly-doped-drain (LDD) MOSFET.- 1.10 Modeling the silicon-on-insulator (SOI) MOSFET.- References.- 2. MOSFET simulation using device simulators.- 2.1 Introduction to device simulators.- 2.2 Description of MEDICI device simulator.- 2.3 Numerical algorithms.- 2.4 Grid in MEDICI.- 2.5 Example of MOSFET simulation.- 2.6 Three-dimensional device simulation.- References.- 3. Extraction of the threshold voltage of MOSFETs.- 3.1 Existing methods for extracting the threshold voltage.- 3.2 Improved threshold voltage extraction method.- 3.3 Threshold voltage shift reversal in short-channel MOSFETs.- 3.4 Threshold voltage shift due to quantum mechanical effects.- References.- 4. Methods for extracting the effective channel length of MOSFETs.- 4.1 Introduction.- 4.2 Current-voltage methods.- 4.3 Capacitance-voltage method.- 4.4 Simulation-based method.- 4.5 Comparison of various extraction methods.- References.- 5. Extraction of the source and drain series resistances of MOSFETs.- 5.1 Introduction.- 5.2 Extraction of total drain and source series resistance.- 5.3 Difference in drain and source series resistances.- 5.4 Physical mechanisms contributing to the drain and source asymmetry.- References.- 6. Parameter extraction of lightly-doped drain (LDD) MOSFETs.- 6.1 Validity of the I-V extraction method for LDD MOSFETs.- 6.2 Bias-dependent effective channel length and series resistance.- 6.3 Constant effective channel length determination method.- 6.4 Capacitance-based metallurgical channel length determination method.- 6.5 Drain and source resistances of LDD MOSFETs.- 6.6 Gate-oxide thickness dependence of LDD MOSFET parameters.- References.- Appendices.- Appendix A Physical constants and unit conversions.- Appendix B Properties of germanium, silicon, and gallium arsenide (at 300 K).- Appendix C Properties of Si02 and Si3N4 (at 300 K).- Appendix D Derivation of the integral function and its applications to parameter extraction.- About the authors.

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