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OverviewAlthough silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications. Full Product DetailsAuthor: Gary L Harris , Cary Y -W YangPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Weight: 0.470kg ISBN: 9783540507062ISBN 10: 354050706 Pages: 208 Publication Date: 08 March 1989 Audience: College/higher education , Professional and scholarly , Undergraduate , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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