|
|
|||
|
||||
OverviewNovel devices with the potential to provide alternatives to existing nanometer CMOS technology are the subject of research in the fields of electronic materials and electronic design automation. This book explores the materials and design requirements of emerging integrated circuit technologies, and outlines their prospective applications. Full Product DetailsAuthor: Ashok Srivastava (Professor, Louisiana State University, Baton Rouge, USA) , Saraju P. Mohanty (Professor, University of North Texas (UNT), Department of Computer Science and Engineering, USA)Publisher: Institution of Engineering and Technology Imprint: Institution of Engineering and Technology ISBN: 9781785616648ISBN 10: 1785616641 Pages: 320 Publication Date: 15 June 2020 Audience: College/higher education , Professional and scholarly , Tertiary & Higher Education , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsChapter 1: Graphene and other than graphene materials technology and beyond Chapter 2: Emerging graphene-compatible biomaterials Chapter 3: Single electron devices: concept to realization Chapter 4: Application of density functional theory (DFT) for emerging materials and interconnects Chapter 5: Memristor devices and memristor-based circuits Chapter 6: Organic-inorganic heterojunctions for optoelectronic applications Chapter 7: Emerging high- dielectrics for nanometer CMOS technologies and memory devices Chapter 8: Technology and modeling of DNTT organic thin-film transistors Chapter 9: Doping-free tunnelling transistors - technology and modelling Chapter 10: Tunnel junctions to tunnel field-effect transistors - technologies, current transport models, and integration Chapter 11: Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration Chapter 12: Molybdenum disulfide-boron nitride junctionless tunnel effect transistorReviewsAuthor InformationAshok Srivastava is the Wilbur D. and Camille V. Fugler, Jr., Professor of Electrical and Computer Engineering at Louisiana State University, Baton Rouge. Professor Srivastava is an associate editor of IEEE Transactions on Nanotechnology and is Editor-in-Chief of the Journal of Sensor Technology. Prof. Srivastava is the author of 200 peer-reviewed articles in VLSI circuits and Systems and has authored a book on Nanoelectronics and edited books in Post-CMOS Nanoelectronics. Saraju P. Mohanty is a professor in the department of computer science and engineering at the University of North Texas (UNT) and is the Editor-in-Chief of IEEE Consumer Electronics magazine. Professor Mohanty is the author of 300 peer-reviewed articles and 4 books. Tab Content 6Author Website:Countries AvailableAll regions |