Advanced Device Modeling And Simulation

Author:   Tibor Grasser (Technische Univ Wien, Austria)
Publisher:   World Scientific Publishing Co Pte Ltd
Volume:   31
ISBN:  

9789812386076


Pages:   216
Publication Date:   21 October 2003
Format:   Hardback
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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Advanced Device Modeling And Simulation


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Overview

Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Full Product Details

Author:   Tibor Grasser (Technische Univ Wien, Austria)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Volume:   31
Dimensions:   Width: 16.80cm , Height: 1.90cm , Length: 23.00cm
Weight:   0.603kg
ISBN:  

9789812386076


ISBN 10:   9812386076
Pages:   216
Publication Date:   21 October 2003
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo); Particle Models for Device Simulation (H Kosina & M Nedjalkov); Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach (C Ringhofer et al.); Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrodinger and Boltzmann System of Equations (N Goldsman & C-K Huang); Hydrodynamic Modeling of RF Noise for Silicon-Based Devices (C Jungemann et al.); Carbon Nanotubes as a Perfectly Conducting Cylinder (T Ando); Hot Carrier Effects Within Macroscopic Transport Models (T Grasser et al.).

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